Kopin gets $750K Phase II award from the MDA

TAUNTON – The Kopin Corp. received a $750,000 two-year contract for the development of aluminum indium nitride-based high electron mobility transistors (AlInN HEMTs).
The Phase II Small Business Innovation Research award was provided through the Missile Defense Agency and will leverage Kopin’s established capability in Group III-Nitrides to enhance the performance and manufacturability of AlInN materials, the company said on Sept. 9.
“The AlInN material system has shown great promise to extend the power and frequency capability of gallium nitrade-based HEMTs, but it is a challenging material to produce. During the Phase I effort, we demonstrated encouraging results in AlInN/GaN heterostructures including record-low sheet resistance,” said Wayne Johnson, Kopin vice president of technology.
“The goals of Phase II will involve optimization of the AlInN HEMT structures and fabrication of HEMT devices for X-band electronics applications in collaboration with leading-edge GaN foundries,” he added.
Kopin produces lightweight, power-efficient, ultra-small liquid crystal displays and heterojunction bipolar transistors used in digital cameras and night vision systems. •